- 您现在的位置：买卖IC网 > Sheet目录540 > ZXMN15A27KTC (Diodes Inc)MOSFET N-CH 150V 1.7A DPAK
A Product Line of
Diodes Incorporated
ZXMN15A27K
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Symbol
V DSS
V GS
Value
150
± 25
Unit
V
V
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Continuous Drain current
(Note 7)
(Note 7)
(Note 4)
(Note 4)
(Note 3)
V GS = 10V T A = 70 ° C (Note 3)
E AS
I AS
E AR
I AR
I D
55
4.3
3.0
4.3
2.55
2.0
mJ
A
mJ
A
A
(Note 2)
1.7
Pulsed Drain current
V GS = 10V (Note 4)
I DM
17.2
A
Continuous Source current (Body diode) (Note 2)
Pulsed Source current (Body diode) (Note 4)
I S
I SM
5.2
17.2
A
A
Thermal Characteristics
Characteristic
(Note 2)
Symbol
Value
4.2
33.6
Unit
Power dissipation
Linear derating factor
(Note 3)
P D
9.5
76.0
W
mW/ ° C
(Note 6)
(Note 2)
2.2
17.2
30.2
Thermal Resistance, Junction to Ambient
(Note 3)
R θ JA
13.1
° C/W
(Note 6)
58.1
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
R θ JL
T J , T STG
2.06
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. The device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point at the end of the drain lead.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition..
7. UIS in production with L = 5.95mH, I AS = 4.3A, R G = 25 ? , V DD = 100V, starting T J = 25°C.
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
2 of 8
www.diodes.com
October 2009
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXMN20B28KTC
MOSFET N-CH 200V 1.5A DPAK
ZXMN2A01E6TC
MOSFET N-CHAN 20V SOT23-6
ZXMN2A01FTC
MOSFET N-CHAN 20V SOT23-3
ZXMN2A02N8TA
MOSFET N-CH 20V 8.3A 8-SOIC
ZXMN2A02X8TC
MOSFET N-CH 20V 6.2A 8-MSOP
ZXMN2A03E6TC
MOSFET N-CHAN 20V SOT23-6
ZXMN2A04DN8TC
MOSFET DUAL N-CHAN 20V 8SOIC
ZXMN2A14FTA
MOSFET N-CH 20V 3.4A SOT23-3
相关代理商/技术参数
ZXMN2069FTA
功能描述:MOSFET N-CH LO VOLT SOT23-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ZXMN2088DE6
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V Dual SOT23-6 N-channel enhancement mode MOSFET
ZXMN2088DE6TA
功能描述:功率驱动器IC 20V DUAL SOT23-6 20V VBR MOSFET
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
ZXMN20B28K
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MOSFETs optimised for Voice over Internet Protocol (VoIP)
ZXMN20B28KTC
功能描述:MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2A01
制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01E6
制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXMN2A01E6_06
制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET